1000 nm to 1650 nm, 1 MHz, Photodetector Module, SM/MM InGaAs PIN Photodiode Suitable for C and L-band

Suitable for C and L-band Amplifiers

Voltage-controlled Lithium Niobate Attenuator Provides Proven High Reliability

Insensitive to Wavelength Variations

converts phase modulation to amplitude modulation over the entire C+L-band in support of data transmission rates of 2

1000 nm to 1650 nm, 1 MHz, Photodetector Module, SM/MM InGaAs PIN Photodiode Suitable for C and L-bandThe photodetector module features > 61. 0 dBm high sensitivity, low noise and 1 MHz to 200 MHz wide band which can be customized. The micro modular structure makes it easier to integrate the system. FEATURES Fiber Distributed Sensing Low Noise High Sensitivity Detection USE IN Raman Temperature Measurement System Space Optical Communication DAS Distributed Acoustic Vibration Test System Low Light Signal Detection Lead Time: Please contact sales